IEC 63505 Ed. 1.0:2025 (en)
SiC MOSFETの閾値電圧(VT)を測定するためのガイドライン
Guidelines for measuring the threshold voltage (VT) of SiC MOSFETs
発行年月日:
2025-04-08
状態:
有効
邦訳版:
無
英語 12ページ
15,400 円(税込) 本体価格:14,000円
- 規格概要
-
IEC 63505:2025 gives guidance on VT measurement methods and conditioning prior to VT testing in SiC power MOSFETs to reduce or eliminate the effect of the aforementioned hysteresis. The method is applicable for PBTI testing, NBTI and threshold voltage changes caused by switching events are excluded from the scope.全文を表示する
SiC MOSFETs have threshold voltage hysteresis caused by transient trap effects, which impacts the evaluation of the actual the VT shift caused by stress tests such as bias temperature instabilities (BTI).
TC |
TC 47 |
---|---|
ICS |
31.080.30 |
備考 |