IEC 63068-4 Ed. 1.0:2022 (en)
半導体素子-電源デバイス用の炭化ケイ素ホモエピタキシャルウエハーの欠陥の非破壊認識基準-第4部:光学検査とフォトルミネッセンスを組み合わせた方法を使用した欠陥の特定と評価の手順
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
発行年月日:
2022-07-27
状態:
有効
邦訳版:
無
英語 25ページ
29,837 円(税込) 本体価格:27,125円
- 規格概要
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IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.全文を表示する
TC |
TC 47 |
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ICS |
31.080.99 |
備考 |