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IEC 63068-3 Ed. 1.0:2020 (b)
半導体素子-電源デバイス用の炭化ケイ素ホモエピタキシャルウエハーの欠陥の非破壊認識基準-第3部:フォトルミネッセンスを利用した欠陥検査方法
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence

発行年月日: 2020-07-13
状態: 有効
邦訳版: 無

規格概要 IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.
TC TC 47
ICS 31.080.99
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