IEC 62951-9 Ed. 1.0:2022 (en)
半導体素子-可とう性及び伸張性半導体素子-第9部:1 トランジスタ 1 抵抗 (1T1R) 抵抗メモリセルの性能試験方法
Semiconductor devices - Flexible and stretchable semiconductor devices - Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
発行年月日:
2022-12-14
状態:
有効
邦訳版:
無
英語 18ページ
22,137 円(税込) 本体価格:20,125円
- 規格概要
-
IEC 62951-9:2022(E) specifies the test methods for evaluating the performance of unipolar-type one transistor one resistor (1T1R) resistive memory cells. The performance test methods in this document include read, forming, SET, RESET, endurance and retention. This document is applicable to flexible devices as well as rigid resistive memory devices without any limitations prone to device technology and size.全文を表示する
TC |
TC 47 |
---|---|
ICS |
31.080.99 |
備考 |