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IEC 60747-9 Ed. 3.0:2019 (b)
半導体素子-第9部:離散素子-絶縁ゲートバイポーラ・トランジスタ (IGBTs)
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)

発行年月日: 2019-11-13
状態: 有効
邦訳版: 無

規格概要
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
  1. reverse-blocking IGBT and its related technical contents have been added;
  2. reverse-conducting IGBT and its related technical contents have been added;
  3. some parts of the previous edition have been amended, combined or deleted.
全文を表示する
TC TC 47/SC 47E
ICS 31.080.30
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