IEC 60747-9 Ed. 3.0:2019 (b)
半導体素子-第9部:離散素子-絶縁ゲートバイポーラ・トランジスタ (IGBTs)
Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs)
発行年月日:
2019-11-13
状態:
有効
邦訳版:
無
英語 160ページ
70,262 円(税込) 本体価格:63,875円
- 規格概要
-
IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).全文を表示する
This third edition includes the following significant technical changes with respect to the previous edition:- reverse-blocking IGBT and its related technical contents have been added;
- reverse-conducting IGBT and its related technical contents have been added;
- some parts of the previous edition have been amended, combined or deleted.
TC |
TC 47/SC 47E |
---|---|
ICS |
31.080.30 |
備考 |