IEC 60749-34-1 Ed. 1.0:2025 (b)
半導体素子－機械及び耐候試験方法－第34-1部：パワー半導体モジュールのパワーサイクル試験
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module
発行年月日：
2025-06-20
状態：
有効
邦訳版：
無
英語 56ページ
41,800 円（税込） 本体価格：38,000円
- 規格概要
-
IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor.全文を表示する
If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document.
This test caused wear-out and is considered destructive.
| TC |
TC 47 |
|---|---|
| ICS |
31.080.01 |
| 備考 |
