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IEC 60749-26 Ed. 5.0 CMV:2025 (en)
半導体素子-機械及び耐候試験方法-第26部:静電気放電(ESD)感度試験-人体モデル(HBM)
Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)

発行年月日: 2025-12-23
状態: 有効
邦訳版: 無

規格概要
IEC 60749-26:2025 CMV contains both the official standard and its commented version. The commented version provides you with a quick and easy way to compare all the changes between IEC 60749-26:2025 edition 5.0 and the previous IEC 60749-26:2018 edition 4.0. Furthermore, comments from IEC TC 47 experts are provided to explain the reasons of the most relevant changes, or to clarify any part of the content.to clarify any part of the content.

IEC 60749-26:2025 establishes the procedure for testing, evaluating, and classifying components and microcircuits in accordance with their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749 27) or other ESD test methods in the IEC 60749 series. Unless otherwise specified, this test method is the one selected.
This edition includes the following significant technical changes with respect to the previous edition:
a) new definitions have been added;
b) text has been added to clarify the designation of and allowances resulting from low parasitics . The new designation includes the maximum number of pins of a device that can pass the test procedure.
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TC TC 47
ICS 31.080.01
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Commented versionに関する説明
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