IEC 60747-8 Ed. 3.1:2021 (en)
半導体素子－個別素子－第8部：電界効果トランジスタ
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
発行年月日：
2021-06-25
状態：
有効
邦訳版：
無
英語 152ページ
93,362 円（税込） 本体価格：84,875円
| 規格概要 | IEC 60747-8:2010+A1:2021 gives standards for the following categories of field-effect transistors: - type A: junction-gate type; - type B: insulated-gate depletion (normally on) type; - type C: insulated-gate enhancement (normally off) type. The main changes with respect to the previous edition are listed below. a) ""Clause 3 Classification"" was moved and added to Clause 1. b) ""Clause 4 Terminology and letter symbols"" was divided into ""Clause 3 Terms and definitions"" and ""Clause 4 Letter symbols"" was amended with additions and deletions. c) Clause 5, 6 and 7 were amended with necessary additions and deletions. This publication is to be read in conjunction with IEC 60747-1:2006. |
|---|---|
| TC |
TC 47/SC 47E |
| ICS |
31.080.30 |
| 備考 |
