IEC/TS 62607-12-3 Ed. 1.0:2026 (en)
ナノマニュファクチャリング-鍵管理特性-第12-3部:2D材料関連製品-2D材料ベースの電界効果トランジスタのショットキー障壁高さ:温度依存性電流電圧測定
Nanomanufacturing - Key control characteristics - Part 12-3: 2D material-related products - Schottky barrier heights of 2D material-based field-effect transistors: temperature-dependent current voltage measurements
発行年月日:
2026-06-09
状態:
有効
邦訳版:
無
英語 18ページ
25,932 円(税込) 本体価格:23,575円
- 規格概要
-
IEC TS 62607-12-3:2026, which is a Technical Specification, establishes a standardized method to determine the key control characteristic全文を表示する
Schottky barrier height (SBH)
from the temperature-dependent current voltage characterization results obtained from two-dimensional (2D) material-based electronic devices.
This document
defines the Schottky barrier formed from the interface between a 2D material and a metal;
specifies a 2D device sample for the measurement of the Schottky barrier;
specifies the measurement procedure for the Schottky barrier formed at the interface within 2D devices;
provides proper mathematical formulas used to extract the Schottky barrier formed from 2D-materials-based devices;
provides relevant case studies; and
provides relevant references
| TC |
TC 113 |
|---|---|
| ICS |
07.120 |
| 備考 |